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參數資料
| 型號： | PIC18F6627EPTQTP |
| 廠商： | Microchip Technology Inc. |
| 英文描述： | 64/80-Pin, 1-Mbit, Enhanced Flash Microcontrollers with 10-bit A/D and nanoWatt Technology |
| 中文描述： | 64/80-Pin，1兆位，增強型閃存微控制器，10位A / D和納瓦技術 |
| 文件頁數： | 116/448頁 |
| 文件大?。?/td> | 3160K |
| 代理商： | PIC18F6627EPTQTP |
PIC18F8722 FAMILY
DS39646B-page 114
Preliminary
2004 Microchip Technology Inc.
8.6
Operation During Code-Protect
Data EEPROM memory has its own code-protect bits in
Configuration Words. External read and write
operations are disabled if code protection is enabled.
The microcontroller itself can both read and write to the
internal data EEPROM regardless of the state of the
code-protect configuration bit. Refer to
Section 25.0
“Special Features of the CPU”
for additional
information.
8.7
Protection Against Spurious Write
There are conditions when the device may not want to
write to the data EEPROM memory. To protect against
spurious EEPROM writes, various mechanisms have
been implemented. On power-up, the WREN bit is
cleared. In addition, writes to the EEPROM are blocked
during
the
Power-up
parameter 33).
The write initiate sequence and the WREN bit together
help prevent an accidental write during brown-out,
power glitch or software malfunction.
Timer
period
(T
PWRT
,
8.8
Using the Data EEPROM
The data EEPROM is a high endurance, byte address-
able array that has been optimized for the storage of
frequently changing information (e.g., program
variables or other data that are updated often).
Frequently changing values will typically be updated
more often than specification D124. If this is not the
case, an array refresh must be performed. For this
reason, variables that change infrequently (such as
constants, IDs, calibration, etc.) should be stored in
Flash program memory.
A simple data EEPROM refresh routine is shown in
Example 8-3.
EXAMPLE 8-3:
DATA EEPROM REFRESH ROUTINE
Note:
If data EEPROM is only used to store
constants and/or data that changes often,
an array refresh is likely not required. See
specification D124.
CLRF
CLRF
BCF
BCF
BCF
BSF
EEADR
EEADRH
EECON1, CFGS
EECON1, EEPGD
INTCON, GIE
EECON1, WREN
; Start at address 0
;
; Set for memory
; Set for Data EEPROM
; Disable interrupts
; Enable writes
; Loop to refresh array
; Read current address
;
; Write 55h
;
; Write 0AAh
; Set WR bit to begin write
; Wait for write to complete
Loop
BSF
MOVLW
MOVWF
MOVLW
MOVWF
BSF
BTFSC
BRA
INCFSZ
BRA
INCFSZ
BRA
EECON1, RD
55h
EECON2
0AAh
EECON2
EECON1, WR
EECON1, WR
$-2
EEADR, F
LOOP
EEADRH, F
LOOP
; Increment address
; Not zero, do it again
; Increment the high address
; Not zero, do it again
BCF
BSF
EECON1, WREN
INTCON, GIE
; Disable writes
; Enable interrupts
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相關代理商/技術參數 |
參數描述 |
|---|---|
| PIC18F6627-I/PT | 功能描述:8位微控制器 -MCU 96 KB FL 4K RAM 70 I/O RoHS:否 制造商:Silicon Labs 核心:8051 處理器系列:C8051F39x 數據總線寬度:8 bit 最大時鐘頻率:50 MHz 程序存儲器大小:16 KB 數據 RAM 大小:1 KB 片上 ADC:Yes 工作電源電壓:1.8 V to 3.6 V 工作溫度范圍:- 40 C to + 105 C 封裝 / 箱體:QFN-20 安裝風格:SMD/SMT |
| PIC18F6627-I/PT | 制造商:Microchip Technology Inc 功能描述:IC SM 8-BIT FLASH MCU |
| PIC18F6627T-E/PT | 功能描述:8位微控制器 -MCU 96 KB FL 3936 RAM 25MHZ RoHS:否 制造商:Silicon Labs 核心:8051 處理器系列:C8051F39x 數據總線寬度:8 bit 最大時鐘頻率:50 MHz 程序存儲器大小:16 KB 數據 RAM 大小:1 KB 片上 ADC:Yes 工作電源電壓:1.8 V to 3.6 V 工作溫度范圍:- 40 C to + 105 C 封裝 / 箱體:QFN-20 安裝風格:SMD/SMT |
| PIC18F6627T-I/PT | 功能描述:8位微控制器 -MCU 96 KB FL 4K RAM 70 I/O RoHS:否 制造商:Silicon Labs 核心:8051 處理器系列:C8051F39x 數據總線寬度:8 bit 最大時鐘頻率:50 MHz 程序存儲器大小:16 KB 數據 RAM 大小:1 KB 片上 ADC:Yes 工作電源電壓:1.8 V to 3.6 V 工作溫度范圍:- 40 C to + 105 C 封裝 / 箱體:QFN-20 安裝風格:SMD/SMT |
| PIC18F6628-E/PT | 功能描述:8位微控制器 -MCU 96KB Flash 4KB RAM 1024 DataEE 12B ADC RoHS:否 制造商:Silicon Labs 核心:8051 處理器系列:C8051F39x 數據總線寬度:8 bit 最大時鐘頻率:50 MHz 程序存儲器大小:16 KB 數據 RAM 大小:1 KB 片上 ADC:Yes 工作電源電壓:1.8 V to 3.6 V 工作溫度范圍:- 40 C to + 105 C 封裝 / 箱體:QFN-20 安裝風格:SMD/SMT |
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